Process damage in single-wafer cleaning process

Soichi Nadahara; Kazuo Saki; Hiroshi Tomita

doi:10.1117/12.284676

2 September 1997 Process damage in single-wafer cleaning process

Soichi Nadahara, Kazuo Saki, Hiroshi Tomita

Proceedings Volume 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing; (1997) https://doi.org/10.1117/12.284676
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

We developed the post CMP cleaning process using cavitation jet in addition to roll sponge cleaning. In this presentation, we discuss the process damage which had been encountered during the cleaning process development using high pressure water. One was erosion and the other was electrostatic charging damage due to high impinging pressure. The tool parameters of cavitation jet were investigated in order to control the cavitation effect for the wafer cleaning process. These process damage were eliminated by control of cavitation power keeping the occurrence of cavity growth and control of the exposure time to the device by cavitation jet. After that, superior cleaning performance was demonstrated by using the combination of cavitation jet and roll sponge cleaner for wafers after CMP.

Citation Download Citation

Soichi Nadahara, Kazuo Saki, and Hiroshi Tomita "Process damage in single-wafer cleaning process", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); https://doi.org/10.1117/12.284676

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