2 September 1997 Process damage in single-wafer cleaning process
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We developed the post CMP cleaning process using cavitation jet in addition to roll sponge cleaning. In this presentation, we discuss the process damage which had been encountered during the cleaning process development using high pressure water. One was erosion and the other was electrostatic charging damage due to high impinging pressure. The tool parameters of cavitation jet were investigated in order to control the cavitation effect for the wafer cleaning process. These process damage were eliminated by control of cavitation power keeping the occurrence of cavity growth and control of the exposure time to the device by cavitation jet. After that, superior cleaning performance was demonstrated by using the combination of cavitation jet and roll sponge cleaner for wafers after CMP.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Soichi Nadahara, Soichi Nadahara, Kazuo Saki, Kazuo Saki, Hiroshi Tomita, Hiroshi Tomita, } "Process damage in single-wafer cleaning process", Proc. SPIE 3215, In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing, (2 September 1997); doi: 10.1117/12.284676; https://doi.org/10.1117/12.284676


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