11 September 1997 Characterization of environmental halogen molecule contamination-induced pad surface corrosion
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Abstract
The photoresist stripping process in passivation stage could induce the bonding pad surface corrosion (Figure-i). And the bonding pad surface corrosion rates will be accelerated if the chlorine concentration levels reach 5 to i 0 ppb in the cleanroom environment. The facility hookup of the exhaust pipelines and the cross contamination between the different airflow system has been identified to be critical regarding the chlorine concentration levels. In order to improve the pad surface susceptibility toward the chlorine molecules induced pad surface corrosion, the CF4 treatment is proposed with excellent passivation and replacement effects.
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Po-Tao Chu, Ching-Wen Cho, Hung-Chi Hsiao, Jie-Shin Wu, Chih-Chien Hung, Ying-Chen Chao, "Characterization of environmental halogen molecule contamination-induced pad surface corrosion", Proc. SPIE 3216, Microelectronic Manufacturing Yield, Reliability, and Failure Analysis III, (11 September 1997); doi: 10.1117/12.284704; https://doi.org/10.1117/12.284704
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KEYWORDS
Corrosion

Chlorine

Metals

Molecules

Semiconducting wafers

Contamination

Chlorine gas

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