Picosecond Laser Damage Mechanisms At Semiconductor Surfaces

M. F. Becker; R. M. Walser; Y. K. Jhee; D. Y. Sheng

doi:10.1117/12.933214

23 April 1982 Picosecond Laser Damage Mechanisms At Semiconductor Surfaces

M. F. Becker, R. M. Walser, Y. K. Jhee, D. Y. Sheng

Proceedings Volume 0322, Picosecond Lasers and Applications; (1982) https://doi.org/10.1117/12.933214
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

We treat picosecond laser induced damage as a non-equilibrium phase transition and propose a new damage mechanism. This model which includes energy transfer by resonant surface plasmons on small electron density droplets is shown to be consistent with existing experimental data. New experimental data has been taken which demonstrates the nucleation and growth aspects of the laser damage process.

Citation Download Citation

M. F. Becker, R. M. Walser, Y. K. Jhee, and D. Y. Sheng "Picosecond Laser Damage Mechanisms At Semiconductor Surfaces", Proc. SPIE 0322, Picosecond Lasers and Applications, (23 April 1982); https://doi.org/10.1117/12.933214

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