5 September 1997 10-um thin GaAs membrane manufactured by nonselective etching
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Proceedings Volume 3223, Micromachining and Microfabrication Process Technology III; (1997) https://doi.org/10.1117/12.284482
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States
Abstract
The aim of this paper is to determine an optimum nonselective etching solution in order to manufacture an as thin as possible, uniform and high quality GaAs membrane. Three different etching systems in various proportions of the components were analyzed. A high quality 10 micrometer thin GaAs membrane was obtained using the [1(H3PO4)]: [1(CH3OH)]: [3(H2O2)] etching solution. The micromachined GaAs membranes are manufactured to be used as support for microwave circuits as well as in high temperature sensor applications.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandru Mueller, Alexandru Mueller, Ioana Petrini, Ioana Petrini, Viorel Avramescu, Viorel Avramescu, Sergiu A. Iordanescu, Sergiu A. Iordanescu, Romolo Marcelli, Romolo Marcelli, Vittorio Foglietti, Vittorio Foglietti, M. Dragoman, M. Dragoman, } "10-um thin GaAs membrane manufactured by nonselective etching", Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); doi: 10.1117/12.284482; https://doi.org/10.1117/12.284482
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