Translator Disclaimer
Paper
5 September 1997 10-um thin GaAs membrane manufactured by nonselective etching
Author Affiliations +
Proceedings Volume 3223, Micromachining and Microfabrication Process Technology III; (1997) https://doi.org/10.1117/12.284482
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States
Abstract
The aim of this paper is to determine an optimum nonselective etching solution in order to manufacture an as thin as possible, uniform and high quality GaAs membrane. Three different etching systems in various proportions of the components were analyzed. A high quality 10 micrometer thin GaAs membrane was obtained using the [1(H3PO4)]: [1(CH3OH)]: [3(H2O2)] etching solution. The micromachined GaAs membranes are manufactured to be used as support for microwave circuits as well as in high temperature sensor applications.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexandru Mueller, Ioana Petrini, Viorel Avramescu, Sergiu A. Iordanescu, Romolo Marcelli, Vittorio Foglietti, and M. Dragoman "10-um thin GaAs membrane manufactured by nonselective etching", Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); https://doi.org/10.1117/12.284482
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
RELATED CONTENT

Progress in III-V materials technology
Proceedings of SPIE (December 16 2004)
Dry plasma etching of GaAs vias using BCl3 Ar and...
Proceedings of SPIE (November 12 1999)
Sub-wavelength structures for broadband diffractive optics
Proceedings of SPIE (January 23 2006)
GaAs-membrane-supported millimeter-wave filters
Proceedings of SPIE (October 01 2001)

Back to Top