Anneal treatment studies of heavily boron-doped silicon

Denise M. Bruce

doi:10.1117/12.284490

5 September 1997 Anneal treatment studies of heavily boron-doped silicon

Denise M. Bruce

Proceedings Volume 3223, Micromachining and Microfabrication Process Technology III; (1997) https://doi.org/10.1117/12.284490
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States

Abstract

An experimental study was performed to investigate the effects of high temperature anneal treatments on the microstructure and curling behavior of heavily boron-doped silicon structures. Cantilever structures were created from p++ boron-diffused silicon wafers. The post-diffusion anneal treatment temperature was varied while the anneal time remained constant. The micromechanical cantilevers were analyzed for curl as a function of the anneal temperature using an optical profiler. Bulk sections from the wafers were analyzed to obtain boron concentration, distribution of lattice constant, and dislocation distribution. Results of the curl measurements revealed that all non-annealed cantilever structures were curled in one direction, and those annealed for 90 minutes above 1100 degrees Celsius were all curled in the other direction, with an apparent transition temperature of about 1050 degrees Celsius. Secondary ion mass spectroscopy (SIMS) analysis confirmed that boron concentration becomes more uniform through the wafer thickness with increasing anneal temperature. X-ray diffraction revealed that the magnitude of the smallest lattice constant present in a wafer increases with increasing anneal temperature, which may allow a compressive stress to develop. Transmission electron microscope (TEM) observations showed that dislocations move during the anneal process to relieve stresses.

Citation Download Citation

Denise M. Bruce "Anneal treatment studies of heavily boron-doped silicon", Proc. SPIE 3223, Micromachining and Microfabrication Process Technology III, (5 September 1997); https://doi.org/10.1117/12.284490

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