5 September 1997 Micromachined accelerometer with a movable-gate-transistor sensing element
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Proceedings Volume 3224, Micromachined Devices and Components III; (1997) https://doi.org/10.1117/12.284530
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States
Abstract
The development of a micromachined accelerometer with high frequency response in described. The accelerometer is based on a thin film layer of polysilicon suspended over a field- effect transistor (FET), forming a moveable-gate transistor. The field effect-transistor is designed for depletion-mode operation. Frequency response greater than 20,000 Hz is predicted with analytical models of the cantilever beam structure. Feedback control electrodes are included for closed-loop operation. The force-balance feedback control produces greater dynamic range and frequency response. The mechanical and electrical modeling of the micromachined structure with MEMCAD 3.0 are described. Results of the device modeling based on SUPREM-3 simulations are also included. This model includes the results of a short loop run carried out at MCNC to determine the interface charge in the transistor gate oxide. The anticipated effect of the oxide charge on the threshold voltage of the FET is included.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel M. Edmans, Daniel M. Edmans, Adolfo O. Gutierrez, Adolfo O. Gutierrez, Chris Cormeau, Chris Cormeau, Edward W. Maby, Edward W. Maby, Howard Kaufman, Howard Kaufman, } "Micromachined accelerometer with a movable-gate-transistor sensing element", Proc. SPIE 3224, Micromachined Devices and Components III, (5 September 1997); doi: 10.1117/12.284530; https://doi.org/10.1117/12.284530
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