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5 September 1997 Pressure sensors based on the metal-semiconductor mesa-structures
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Proceedings Volume 3224, Micromachined Devices and Components III; (1997) https://doi.org/10.1117/12.284527
Event: Micromachining and Microfabrication, 1997, Austin, TX, United States
Abstract
Results of investigations in the field of scientific problems are presented and prospects for creation of new pressure sensors, based on the pressure-sensitivity effect in metal-semiconductor mesa-structures, are analyzed in this paper. Principle characteristics of such devices - motion sensors, vibrometers, deflectometers, elastic wave meters are discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shamil D. Kurmashev, Andrey A. Gradoboev, Alexandr N. Sofronkov, and Andjey Gavdzick "Pressure sensors based on the metal-semiconductor mesa-structures", Proc. SPIE 3224, Micromachined Devices and Components III, (5 September 1997); https://doi.org/10.1117/12.284527
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