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15 September 1982 Comparative Study Of GaAs Grown By Organometallic Chemical Vapor Deposition (OMCVD) Using Trimethyl And Triethyl Gallium Sources
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Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934283
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States
Abstract
Atmospheric and low pressure (76 torr) epitaxial growth of gallium arsenide (GaAs) from trimethyl gallium (TMG) and triethyl gallium (TEG) has been studied. The results indicate that both TMG and TEG are capable of yielding high purity GaAs epitaxial layers. TMG is the preferred compound when large area uniform layers are desired at all reactor pressures. TEG is recommended only in those cases where carbon acceptor free GaAs is required and low pressure capability is available.
© (1982) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rajaram Bhat and Vassilis G. Keramidas "Comparative Study Of GaAs Grown By Organometallic Chemical Vapor Deposition (OMCVD) Using Trimethyl And Triethyl Gallium Sources", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934283
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