Impurity Energy Levels For Se And Zn In Ga[sub](1 -x)[/sub]Al[sub]x[/sub]As

Jane J. Yang; William I. Simpson; Lavada A. Moudy

doi:10.1117/12.934286

15 September 1982 Impurity Energy Levels For Se And Zn In Ga_{(1 -x)}Al_xAs

Jane J. Yang, William I. Simpson, Lavada A. Moudy

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934286
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Electrical properties and the impurity energy levels in Se-doped n-Ga(l-x)AlxAs (0≤x≤0.82) and Zn-doped p-Ga1-xAlxAs (0≤x≤1) prepared by metalorganic chemical vapor deposition have been investigated. The van der Pauw technique was used to measure the electrical properties of Ga(l-x)AlxAs. The resistivity and carrier concentrations of Ga(1-x)AlxAs were found to be strongly affected by the impurity energy levels for Se and Zn. Tne donor energy levels, ED, of Se in Ga(1-x)A1xAs was found to take the form of an inverted V with a maximum at the direct-indirect band crossover while the acceptor energy levels, EA, of Zn was found to increase with increasing A1 mole fraction.

Citation Download Citation

Jane J. Yang, William I. Simpson, and Lavada A. Moudy "Impurity Energy Levels For Se And Zn In Ga_{(1 -x)}Al_xAs", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934286

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