Optical Device Structures Grown By Liquid Phase Epitaxy (LPE)

R. A. Logan

doi:10.1117/12.934290

15 September 1982 Optical Device Structures Grown By Liquid Phase Epitaxy (LPE)

R. A. Logan

Proceedings Volume 0323, Semiconductor Growth Technology; (1982) https://doi.org/10.1117/12.934290
Event: 1982 Los Angeles Technical Symposium, 1982, Los Angeles, United States

Abstract

Near ideal injection lasers can be grown by liquid phase epitaxy but the growth process must include etching of a first epitaxial growth and controlled wetting, melt back and re-growth in a second growth cycle. The growth and properties of two such lasers, the strip buried heterostructure (SBH) and loss stabilized buried optical guide (LSBOG) are described in some detail. Similar growth procedures provide integration of lasers with waveguides, modulators, distributed Bragg reflectors and the formation of uniform arrays of lasers with laser to laser separation as close as 15 μm.

Citation Download Citation

R. A. Logan "Optical Device Structures Grown By Liquid Phase Epitaxy (LPE)", Proc. SPIE 0323, Semiconductor Growth Technology, (15 September 1982); https://doi.org/10.1117/12.934290

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