23 January 1998 Advanced millimeter-wave MMIC technology and circuit development
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Proceedings Volume 3232, Wireless Technologies and Systems: Millimeter-Wave and Optical; (1998) https://doi.org/10.1117/12.301019
Event: Voice, Video, and Data Communications, 1997, Dallas, TX, United States
This paper summarizes the results of recent monolithic millimeter-wave circuits (MMICs) developed at TRW using the most advanced MMIC technologies, including GaAs-based power high electron mobility transistor (HEMT) on 2-mil thick substrate, InP-based HEMT and hetero-junction bipolar transistor (HBT) MMICs. For power applications, the 2-mil GaAs MMIC power amplifiers (PAs) demonstrated state-of-the-art output power performance at Ka- (35 GHz) and W-band (94 GHz). For InP HEMT MMIC, a 155-GHz low noise amplifier (LNA) was demonstrated, while for InP HBT MMIC, a 94-GHz fundamental mode voltage controlled oscillator (VCO) exhibited output signal at 94.7 GHz. The 155-GHz LNA and 94-GHz VCO are the highest frequency three-terminal device amplifier and bipolar device fundamental-mode oscillator ever built, respectively. Moreover, the HEMT and HBT devices have been successfully integrated on the same InP substrate and a 24-GHz frequency source consisting an HBT VCO and a HEMT buffer amplifier as well as an HBT-regulated 94-GHz HEMT LNA on a single chip using selective epitaxy technique was demonstrated. These results represent state-of-the-art development status of MMICs and the technologies can be greatly beneficial to the next generation millimeter-wave (MMW) wireless communication systems.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Huei Wang, Huei Wang, } "Advanced millimeter-wave MMIC technology and circuit development", Proc. SPIE 3232, Wireless Technologies and Systems: Millimeter-Wave and Optical, (23 January 1998); doi: 10.1117/12.301019; https://doi.org/10.1117/12.301019

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