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12 February 1997 Accuracy of 3D optical lithography simulation for advanced reticles
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Abstract
Optical lithography over the next few product generations will demand the use of various types of advanced reticles (OPC, attenuated phase shift, alternating phase shift, etc.). Planing for these generations relies ever more heavily on simulation to make intelligent choices among the options in exposure wavelength, numerical aperture, reticle type and design, etc. Simulation of resist exposures of 2-dimensional reticle patterns becomes increasingly important, since some 2- D reticle patterns (and resulting 3-D resist patterns) are crucial to the device structure and at the same time the most sensitive to resolution limitations. Simulation of arbitrary 2-D mask structures is also a much more difficult task than for 1-D reticle patterns, requiring not only more computing power but more complex algorithms. These structures pose a severe challenge to the calibration of a simulation tool: however, this is also an opportunity to make a simulation program more useful by demonstrating more predictive power. We present experimental data and simulations illustrating progress towards calibration accuracy on some key 3-D resist patterns for a 0.25 micrometer lithography process. Careful calibration of the model provides for accurate simulation under a wide variety of conditions, thus allowing the use of simulation for critical feature mask design.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Richard F. Hollman and Chris A. Mack "Accuracy of 3D optical lithography simulation for advanced reticles", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301215
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