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12 February 1997 Application of alternating phase-shifting masks to 140-nm gate patterning: linewidth control improvements and design optimization
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Abstract
In this paper we show that the problem of intrafield line width variations can be effectively solved through a novel application of alternating phase-shifting mask (PSM) technology. To illustrate its advantages, we applied this approach to produce 140 nm transistor gates using DUV (248 nm wavelength, KrF) lithography. We show that: systematic intrafield line width variations can be controlled to within 10 nm (3 (sigma) ), and variations across the wafer held to within 15 nm (3 (sigma) ), with a target k1 factor of K1 equals 0.237 (140 nm target gate lengths).
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hua-Yu Liu, Linard Karklin, Yao-Ting Wang, and Yagyensh C. Pati "Application of alternating phase-shifting masks to 140-nm gate patterning: linewidth control improvements and design optimization", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301204
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