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12 February 1997 Clear-field reticle defect disposition for advanced sub-half-micron lithography
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Abstract
The focus of this work is to provide a methodology to accurately disposition clear field contaminants at the reticle inspection station. A test mask was designed with programmed resist and chrome defects to simulate clear field contamination. Wafers were printed using a variety of 0.50 micrometer/0.35 micrometer/0.25 micrometer lithography processes. We determine printability using I-line and DUV resist under different illumination conditions. We demonstrate that aerial image simulation and defect size are the most practical methodologies to disposition semi-transparent defects. We show aerial image simulation to correlate with printed wafer results for soft defects.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kent B. Ibsen, John Robert Ilzhoefer, and Mark D. Eickhoff "Clear-field reticle defect disposition for advanced sub-half-micron lithography", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301182
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