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12 February 1997 Evaluation of a next-generation vector electron-beam mask pattern lithography system
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Abstract
A new vector electron beam mask pattern generation system has been developed for high throughput 0.25 micrometer design rule and below reticle production. The UltraBeam V2000 is based on the core technologies introduced in the EBES 4.0 system developed previously by Lepton, Inc., which included a unique vector scan architecture, high brightness thermal field emission (TFE) source, as well as a 500 MHz chip set. The new UltraBeam system features a number of significant hardware and software enhancements which have resulted in increased precision in the multilevel deflection and stage control systems. In addition, a new writing strategy featuring a soft boundaries vector writing technology has been developed, allowing the UltraBeam V2000 to meet the resolution, accuracy, and edge placement precision required for subresolution applications such as optical proximity correction (OPC). This paper describes the new hardware and software features of the V2000 and summarizes the performance of the new system in the areas of CD uniformity, placement accuracy, overlay, and CD linearity. In addition, a comparison will be made of the writing times achieved for advanced commercial production masks.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Carl M. Rose, Lawrence C. Wang, James Paul Justen, and Manny Ferreira "Evaluation of a next-generation vector electron-beam mask pattern lithography system", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301224
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