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12 February 1997 Initial characterization results of a low-voltage CD SEM for reticle metrology
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Abstract
This paper presents results obtained using a low-voltage critical dimension scanning electron microscope (CD SEM) for the imaging and measurement of features patterned on quartz photomasks. The SEM system used was designed for handling silicon wafer substrates and has been adapted to accommodate 6', 250 mil photomask substrates. The scope for this initial characterization is limited to the two most common reticle metrology applications on current technology photomasks; patterned PBS photoresist features on chrome, and patterned chrome features on quartz. Images, data, and analysis of the characterization results are presented, and the unique difficulties of imaging and measurement of each of these two types of samples is discussed.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rich Quattrini, Craig W. MacNaughton, Richard C. Elliott, Waiman Ng, Rohit Malhotra, Mohan Ananth, and Jason C. Yee "Initial characterization results of a low-voltage CD SEM for reticle metrology", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.301185
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