12 February 1997 New electron microscope system for pattern placement metrology
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Abstract
Details of a new comparator for pattern placement measurement on masks and wafers are described. The electron-optical metrology system (EOMS) consists of a low energy scanning electron microscope (SEM) with a large specimen chamber and an x-y-stage with 300 mm travel range controlled by laser vacuum interferometry. The design of the instrument is discussed with special emphasis on its metrology components, the laser interferometer and the electron beam probe. The secondary electron image formation of mask and wafer structures and the extraction of the edge position information are described. Recent comparison measurements between the EOMS and a LMS 2020 metrology system are reported. A discussion of the results includes the deviations between both coordinate measurements and the problem of traceability of the length measurement on both comparators. Applications of further measurements on different mask types are presented.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harald Bosse, Wolfgang Haessler-Grohne, "New electron microscope system for pattern placement metrology", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); doi: 10.1117/12.301186; https://doi.org/10.1117/12.301186
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KEYWORDS
Photomasks

Scanning electron microscopy

Metrology

Electron microscopes

Edge detection

Calibration

Interferometers

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