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12 February 1997 Performance of a new high-NA scanned-laser mask lithography system
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To meet the challenges of peak production of 0.25-micrometer design rule photomasks, a new generation of scanned-laser reticle writers has been developed. Based on the architecture of the ALTA 3000, the resolution and critical dimension (CD) control have been improved by integrating a new 33X, 0.8- NA reduction lens. The spot size of 0.27-micrometer FWHM represents a reduction by a factor of 0.6 relative to preceding scanned-laser products, thereby providing excellent CD linearity down to 0.5 micrometer. High throughput is maintained by reducing the number of averaging passes from eight to four. The sharper aerial image produced by the system limits the CD biasing which may be obtained using dose adjustment, so a dry etch process with zero etch bias must be used for optimal performance. Early characterization of the system indicates performance consistent with that required for 0.25 micrometer integrated circuits.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Henry Chris Hamaker and Peter D. Buck "Performance of a new high-NA scanned-laser mask lithography system", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997);

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