Characterization of sol-gel-prepared Ti02 thin film for O2 sensing

Massood Zandi Atashbar; Muralihar K. Ghantasala; Wojtek Wlodarski

doi:10.1117/12.293527

14 November 1997 Characterization of sol-gel-prepared Ti0₂ thin film for O₂ sensing

Massood Zandi Atashbar, Muralihar K. Ghantasala, Wojtek Wlodarski

Proceedings Volume 3241, Smart Materials, Structures, and Integrated Systems; (1997) https://doi.org/10.1117/12.293527
Event: Far East and Pacific Rim Symposium on Smart Materials, Structures, and MEMS, 1997, Adelaide, Australia

Abstract

This paper presents the results of our investigation on deposition and characterization of sol-gel prepared TiO₂ thin films for oxygen sensing applications. The properties of pure TiO₂ thin films are compared with those doped with niobium oxide and 1%pt. These films are characterized using Rutherford backscattering spectroscopy (RBS), x-ray diffraction (XRD) and scanning electron microscopy (SEM) to study their chemical composition, structure and surface morphology respectively. Both kinds of the films are stoichiometric. Pure TiO₂ as well as doped films were amorphous as deposited. Pure TiO₂ films after annealing to 450 degrees Celsius and above showed the formation of anatase phase, while the doped films still predominantly amorphous, barely showing the onset of crystallinity. Pure films after annealing to 600 degrees Celsius appear to have become granular and porous. Doping with niobium oxide and Pt resulted in modification of film microstructure also. As a result of doping, the gas sensitivity of the films is increased from 8 to 24 and operating temperature decreased from 320 degrees Celsius to 190 degrees Celsius.

Citation Download Citation

Massood Zandi Atashbar, Muralihar K. Ghantasala, and Wojtek Wlodarski "Characterization of sol-gel-prepared Ti0₂ thin film for O₂ sensing", Proc. SPIE 3241, Smart Materials, Structures, and Integrated Systems, (14 November 1997); https://doi.org/10.1117/12.293527

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