Measurement of thermal expansion coefficient of poly-Si using microgauge sensors

Jung Hun Chae; Jae-Youl Lee; Sang Won Kang

doi:10.1117/12.293562

14 November 1997 Measurement of thermal expansion coefficient of poly-Si using microgauge sensors

Jung Hun Chae, Jae-Youl Lee, Sang Won Kang

Proceedings Volume 3242, Smart Electronics and MEMS; (1997) https://doi.org/10.1117/12.293562
Event: Far East and Pacific Rim Symposium on Smart Materials, Structures, and MEMS, 1997, Adelaide, Australia

Abstract

Thermal expansion coefficient of heavily doped LPCVD polycrystalline thin film was extracted by microgauge sensors. When electrical power was applied to the microgauge, it was heated up and thermal expansion occurred. From the relation between applied current and measured displacement at the microgauge, thermal expansion coefficient of thin film was extracted. The results revealed a value of 2.9 X 10^-6 /K of thermal expansion coefficient of highly doped poly-Si thin films with standard deviation of 0.24 X 10^-6 /K.

Citation Download Citation

Jung Hun Chae, Jae-Youl Lee, and Sang Won Kang "Measurement of thermal expansion coefficient of poly-Si using microgauge sensors", Proc. SPIE 3242, Smart Electronics and MEMS, (14 November 1997); https://doi.org/10.1117/12.293562

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