14 November 1997 Novel method for electroplating on silicon without the need of a continuous-plating base film
Author Affiliations +
Abstract
In this paper we present a novel method for selective electroplating on silicon without the need of using a continuous plating base film. Ion implantation on the polished front face of a silicon wafer is employed to induce selective seeding of electroplating. Silicon substrates have been implanted at RT with 19 keV Pd+ ions at several doses 7e14, 2e15, 1e16 and 1e17 ions/c,2 using a metal vapor vacuum arc ion implanter. These are then electroplated under similar bath conditions using a Ni-Fe plating solution to produce permalloy films. The unimplanted regions do not get plated showing the selective nature of this seeding process. Adhesion is better for films plated on substrates implanted at higher dose. To study the effect of implanted species, a silicon wafer was implanted with self ions and plated under similar conditions. This sample showed deposition of an extremely thin film. The potential of the technique has been demonstrated by patterning 50 and 100 (mu) wide metallic structures on silicon substrate.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Muralihar K. Ghantasala, Muralihar K. Ghantasala, Dinesh K. Sood, Dinesh K. Sood, "Novel method for electroplating on silicon without the need of a continuous-plating base film", Proc. SPIE 3242, Smart Electronics and MEMS, (14 November 1997); doi: 10.1117/12.293558; https://doi.org/10.1117/12.293558
PROCEEDINGS
7 PAGES


SHARE
Back to Top