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20 April 1998 Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained SQW BH laser diodes
Radu G. Ispasoiu, Niculae N. Puscas, Emil Smeu, C. E. Botez, Vladimir P. Iacovlev, Alexandru Z. Mereutza, Grigore I. Suruceanu
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Proceedings Volume 3244, Laser-Induced Damage in Optical Materials: 1997; (1998) https://doi.org/10.1117/12.307049
Event: Laser-Induced Damage in Optical Materials: 1997, 1997, Boulder, CO, United States
Abstract
In this paper we report an indirect method based on photomultiplier response calibration to measure the radiant power of the internal second harmonic generation (ISHG) from InGaAs/GaAs/AlGaAs strained single quantum well buried heterostructure laser diodes. We observed enhanced ISHG radiant power, of the order of magnitude of 10-8 W. This phenomenon represents a signature of the beginning of the process of catastrophic optical degradation of the LD mirror facet layers, where the nonlinear optical interaction occurs.
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Radu G. Ispasoiu, Niculae N. Puscas, Emil Smeu, C. E. Botez, Vladimir P. Iacovlev, Alexandru Z. Mereutza, and Grigore I. Suruceanu "Enhanced internal second harmonic generation in InGaAs/GaAs/AlGaAs strained SQW BH laser diodes", Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); https://doi.org/10.1117/12.307049
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KEYWORDS
Harmonic generation
Semiconductor lasers
Calibration
Heterojunctions
Mirrors
Photomultipliers
Quantum wells
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