20 April 1998 Structural quality of impurity-containing KDP single crystals
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Abstract
KDP single crystals grown from aqueous solutions by the recirculation method from nominally 'pure' raw material and added impurities Ca, Si, Pb, Cr, hydrogen peroxide were studied by high resolution x-ray method. It was found that additional introduction of impurities leads to a deterioration of structural quality of crystals. The main growth defects of crystals at dislocation density approximately 102 cm-2 at the absence of zonarity and sectionality is the impurity striation and presence of low angle quasi-boundaries. One can observe a correlation between the concentration of low angle quasi-boundaries, dispersion of structure sensitive parameters and the value of bulk laser damage threshold.
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V. F. Tkachenko, M. A. Rom, Vitaly I. Salo, Marina I. Kolybayeva, "Structural quality of impurity-containing KDP single crystals", Proc. SPIE 3244, Laser-Induced Damage in Optical Materials: 1997, (20 April 1998); doi: 10.1117/12.307043; https://doi.org/10.1117/12.307043
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KEYWORDS
Crystals

Bulk lasers

Calcium

Chromium

Hydrogen

Laser damage threshold

Lead

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