27 May 1998 High-power high-speed single-mode diode lasers for optical intersatellite link applications
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High power single-mode AlGaAs semiconductor lasers operating between 820 nm and 860 nm (SDL-5400 series diodes) have been successfully qualified for deployment in many free-space inter-satellite communication link programs. Traditionally these high power devices did not have sufficient bandwidth for direct high speed modulation because of large device and package parasitics. We have improved the device parasitics of the SDL-5430 laser diode, i.e. reduced the RC product, from 240 ps to about 40 ps. The initial measurements indicate that this device (SDL-5480) is suitable for high power optical inter-satellite link (OISL) applications at data rates greater than 1 Gbit/s. The preliminary life test indicates that the new device has better a reliability than the previous design.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Benjamin Li, Benjamin Li, WeiJian Sha, WeiJian Sha, PingHui Sophia Yeh, PingHui Sophia Yeh, Radhakrishnan Nagarajan, Radhakrishnan Nagarajan, Richard R. Craig, Richard R. Craig, } "High-power high-speed single-mode diode lasers for optical intersatellite link applications", Proc. SPIE 3266, Free-Space Laser Communication Technologies X, (27 May 1998); doi: 10.1117/12.308717; https://doi.org/10.1117/12.308717

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