8 July 1998 THz generation from photoconductive switches fabricated by using an atomic force microscope
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Abstract
We have proposed and realized a structure of insulator-gap photoconductive switches by using an atomic force microscope (AFM). The insulator-gap structure prevents discharge in a photoconductive gap, to realize strong electric field in photo-absorbing region. We have made photoconductive switches with a gap of 43 nm and 100 nm. We also made multiple gap structures to reduce dark current. Ultrafast response for transmission modes have been estimated by the electro-optic (EO) sampling which can measure vector components of electric field. The radiation modes from the photoconductive switches with antenna structures have been measured by a Fourier transform polarizing interferometer.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Taro Itatani, Taro Itatani, Tadashi Nakagawa, Tadashi Nakagawa, } "THz generation from photoconductive switches fabricated by using an atomic force microscope", Proc. SPIE 3269, Commercial Applications of Ultrafast Lasers, (8 July 1998); doi: 10.1117/12.312338; https://doi.org/10.1117/12.312338
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