3 June 1998 High-average-power Ce:LiCaF laser at 1-KHz repetition rate tunable from 280 nm to 315 nm
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Abstract
We report on the generation and potential applications of an UV light source tunable from 280 nm to 315 nm with an average power of more than 0.5 W and high absolute conversion efficiency. Overall conversion from the diode pumped Nd:YAG laser fundamental (1064 micrometers ) wavelength to the tunable output exceeded 6%, and an absolute efficiency of Ce:LiCaF laser to the 266 nm pump was in excess of 27%. The diode pumped Nd:YAG laser used in the experiments delivered 1.9 W of average power at 266 nm by successive doubling and quadrupling of 8 W output at 1064 mum. The advantage of using 1 kHz pulsed-diode pumped Nd:YAG laser source lies in relatively high energy per pulse, as compared to the systems with continuous diode pumping, thus allowing high conversion efficiency into fourth harmonic. The fourth harmonic output beam was slightly focused into a 5 mm long Ce(2at.%):LiCaF crystal with AR coated faces. The relatively large energy of the pump pulses resulted in a large beam cross-section in the crystal, thus allowing efficient quasicollinear longitudinal pumping. The laser was tunable from 280 nm to 315 nm. The output linewidth varied from 0.3 to 0.6 nm, depending on spectral position and the pump power. Applications in microelectronic and optoelectronic manufacturing will be discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sergei V. Govorkov, Sergei V. Govorkov, A. Wiebner, A. Wiebner, Peter Genter, Peter Genter, Uwe Stamm, Uwe Stamm, Wolfgang Zschocke, Wolfgang Zschocke, Thomas Schroeder, Thomas Schroeder, Dirk Basting, Dirk Basting, } "High-average-power Ce:LiCaF laser at 1-KHz repetition rate tunable from 280 nm to 315 nm", Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); doi: 10.1117/12.309494; https://doi.org/10.1117/12.309494
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