3 June 1998 Laser writing of quantum well intermixed GaInAsP/InP microstructures
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Abstract
Laser-induced intermixing of quantum well (QW) and barrier material has been studied in GaInAsP/InP laser heterostructures grown by chemical beam epitaxy. Samples were exposed to CW Nd:YAG laser radiation for 7.5 to 300 sec with power densities in the range of 3 to 9 W/mm2. With a laser beam tightly focused on the surface, this approach has the potential to `write' lines of arbitrary shapes of quantum well intermixed material. A 90 nm blue shift of the QW PL peak was demonstrated in the material processed with a triple pass of the 7.5 W/mm2 laser beam. This result has been achieved with a writing speed of 20 micrometers /s. The influence of laser power, dwell time per pass and total irradiation time of the Nd:YAG laser beam on the extent of the blue shift and the optical properties of GaInAsP-based quantum well structures were investigated.
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Jan J. Dubowski, Jan J. Dubowski, N. Sylvain Charbonneau, N. Sylvain Charbonneau, Philip J. Poole, Philip J. Poole, Alain P. Roth, Alain P. Roth, Charles Lacelle, Charles Lacelle, Margaret Buchanan, Margaret Buchanan, } "Laser writing of quantum well intermixed GaInAsP/InP microstructures", Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); doi: 10.1117/12.309526; https://doi.org/10.1117/12.309526
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