Paper
3 June 1998 Pattern precision of excimer ablation lithography (EAL)
Kenkichi Suzuki, Toshio Ogino, Takao Terabayashi, Kazutami Kawamoto, Hiroyuki Hirayama
Author Affiliations +
Abstract
Differences between EAL and the conventional photolithography are mainly with respect to the resist materials and the mask. The mask consists of dielectric multilayer reflector, and the thickness and the structure are completely different from Cr masks. This paper is aimed to clarify the influences of dielectric mask to the image qualities, and presents a rigorous simulation of the diffraction by the dielectric mask and preliminary experimental results. These results show that for low N.A. imaging system, there are not substantial differences between the dielectric mask and the metal mask concerning the resolution power, however further investigations are required for the interpretation of rather wide resist edge corresponding to a straight edge of the large opening mask.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenkichi Suzuki, Toshio Ogino, Takao Terabayashi, Kazutami Kawamoto, and Hiroyuki Hirayama "Pattern precision of excimer ablation lithography (EAL)", Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); https://doi.org/10.1117/12.309517
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Dielectrics

Multilayers

Laser ablation

Diffraction

Lithography

Chromium

Back to Top