3 June 1998 Pattern precision of excimer ablation lithography (EAL)
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Differences between EAL and the conventional photolithography are mainly with respect to the resist materials and the mask. The mask consists of dielectric multilayer reflector, and the thickness and the structure are completely different from Cr masks. This paper is aimed to clarify the influences of dielectric mask to the image qualities, and presents a rigorous simulation of the diffraction by the dielectric mask and preliminary experimental results. These results show that for low N.A. imaging system, there are not substantial differences between the dielectric mask and the metal mask concerning the resolution power, however further investigations are required for the interpretation of rather wide resist edge corresponding to a straight edge of the large opening mask.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kenkichi Suzuki, Kenkichi Suzuki, Toshio Ogino, Toshio Ogino, Takao Terabayashi, Takao Terabayashi, Kazutami Kawamoto, Kazutami Kawamoto, Hiroyuki Hirayama, Hiroyuki Hirayama, } "Pattern precision of excimer ablation lithography (EAL)", Proc. SPIE 3274, Laser Applications in Microelectronic and Optoelectronic Manufacturing III, (3 June 1998); doi: 10.1117/12.309517; https://doi.org/10.1117/12.309517

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