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1 April 1998 Novel DUV photoresist modeling by optical thin film decomposition from spectral ellipsometry/reflectometry data
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Abstract
New metrology for characterizing the chemically amplified resist is required to meet the stringent demands of DUV lithography. In this paper, we present a systematic methodology to characterize DUV photoresist by decomposing the resist thin-film into different empirical components according to their optical properties. The innovation of this metrology includes three parts: ellipsometry and reflectometry measurement data de-noising; sophisticated dispersion models derived from the Kramers-Kronig relations for optical thin-film component description; and an intelligent simulated annealing algorithm for the optimization computational engine.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xinhui Niu, Nickhil H. Jakatdar, and Costas J. Spanos "Novel DUV photoresist modeling by optical thin film decomposition from spectral ellipsometry/reflectometry data", Proc. SPIE 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, (1 April 1998); https://doi.org/10.1117/12.304403
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