Surface particle detection for the 0.07-um generation and beyond

Benjamin D. Buckner; Lakkapragada Suresh; E. Dan Hirleman

doi:10.1117/12.304394

1 April 1998 Surface particle detection for the 0.07-μm generation and beyond

Benjamin D. Buckner, Lakkapragada Suresh, E. Dan Hirleman

Proceedings Volume 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II; (1998) https://doi.org/10.1117/12.304394
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The detection of surface particles has become important in contamination control over the years. However, the minimum particle size required to be detected has been becoming smaller as IC geometries shrink. Current visible-light detection systems can detect particles down to around 60 nm in polystyrene-latex-equivalent size and so should be adequate for geometries down to around 0.18 micrometers , but a quick glance at the National Technology Roadmap for Semiconductors shows that geometries are expected to become as small as 0.07 micrometers in a little over ten years, requiring the ability to detect particles around 20 nm in diameter. This is beyond the capability of current visible-light scanners, so the Semiconductor Research Corporation has recently commissioned our group to conduct research into the limits of optical defect detection and potential of alternative detection techniques. This research centers on short-wavelength optical systems and scanned electron-beam systems as the most likely candidate technologies for high- speed nanoparticle detection. In this paper we develop a model for the analysis of the performance of hypothetical short-wavelength surface inspection systems and examine the manifold difficulties involved with using those wavelengths. The properties of scattering in the transitional region between the UV and X-ray regimes are also examined.

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Benjamin D. Buckner, Lakkapragada Suresh, and E. Dan Hirleman "Surface particle detection for the 0.07-μm generation and beyond", Proc. SPIE 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, (1 April 1998); https://doi.org/10.1117/12.304394

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KEYWORDS

Particles

Scattering

Ultraviolet radiation

Semiconducting wafers

X-rays

Extreme ultraviolet

Signal detection

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