Application of bidirectional ellipsometry to the characterization of roughness and defects in dielectric layers

Thomas A. Germer

doi:10.1117/12.304397

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1 April 1998 Application of bidirectional ellipsometry to the characterization of roughness and defects in dielectric layers

Thomas A. Germer

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Proceedings Volume 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II; (1998) https://doi.org/10.1117/12.304397
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

The polarization of light scattered into directions out of the plane of incidence is calculated for microroughness, defects, or particles in or near a dielectric film on a substrate. The theories for microroughness and Rayleigh scatter in the presence of dielectric films are reviewed, and a method for calculating the Mueller matrix for scatter from multiple sources is described. The situation of a 1 micrometers thick layer of SiO₂ on a silicon substrate illuminated by a p-polarized 633 nm light at a 60 degree(s) angle of incidence is used to demonstrate the model calculations. The polarization of scattered light is calculated for scatter from roughness at each of the interfaces separately and roughness of both interfaces when those roughnesses are correlated and uncorrelated. The scatter from a single Rayleigh defect is considered as a function of the position of that defect within the dielectric film, and the scatter from a random distribution of Rayleigh defects in the layer is calculated. The capability of distinguishing amongst different scattering sources is discussed.

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Thomas A. Germer "Application of bidirectional ellipsometry to the characterization of roughness and defects in dielectric layers", Proc. SPIE 3275, Flatness, Roughness, and Discrete Defects Characterization for Computer Disks, Wafers, and Flat Panel Displays II, (1 April 1998); https://doi.org/10.1117/12.304397

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