Translator Disclaimer
23 April 1998 Arsenic-implanted GaAs: an alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications
Author Affiliations +
Abstract
Arsenic-ion-implanted GaAs (or GaAs:As+), with excess- arsenic-related deep level defects, has recently emerged as a potential alternative to low-temperature molecular-beam- epitaxy (LTMBE) grown GaAs for ultrafast optoelectronic applications. In this paper, we review results of our structural, ultrafast optical and optoelectronic investigations of as-implanted and thermally annealed GaAs:As+. Picosecond photoconductive switching responses are reported for devices fabricated on thermally- annealed low-dose and high-dose implanted GaAs:As+. Novel sign reversals in near-bandgap ultrafast optical responses were observed and explained.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ci-Ling Pan and Gong-Ru Lin "Arsenic-implanted GaAs: an alternative material to low-temperature-grown GaAs for ultrafast optoelectronic applications", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306153
PROCEEDINGS
9 PAGES


SHARE
Advertisement
Advertisement
Back to Top