Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: a subpicosecond Raman probe

Kong-Thon F. Tsen; David K. Ferry; Jyh-Shyang Wang; Chao-Hsiung Huang; Hao-Hsiung Lin

doi:10.1117/12.306165

23 April 1998 Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: a subpicosecond Raman probe

Kong-Thon F. Tsen, David K. Ferry, Jyh-Shyang Wang, Chao-Hsiung Huang, Hao-Hsiung Lin

Author Affiliations +

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306165
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We have studied transient electron transport in an InP p-i-n nanostructure semiconductor by subpicosecond Raman spectroscopy at T equals 300 K. Both the non-equilibrium electron distribution and electron drift velocity in the regime of electron velocity overshoot have been directly measured. It is demonstrated that electron drift velocity in an InP p-i-n nanostructure is significantly larger than that in a GaAs p-i-n nanostructure sample, as a result of the larger central to satellite valley energy separation in InP.

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Kong-Thon F. Tsen, David K. Ferry, Jyh-Shyang Wang, Chao-Hsiung Huang, and Hao-Hsiung Lin "Direct observation of electron velocity overshoot in an InP p-i-n nanostructure semiconductor: a subpicosecond Raman probe", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306165

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