23 April 1998 Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation
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Abstract
We have used electric-field-induced Raman scattering to quantitatively assess the effects of carrier screening on the average electric fields in a GaAs-based p-i-n nanostructure semiconductor under the subpicosecond laser photoexcitation. Our experimental results demonstrated that the effects of carrier screening on the average electric field were negligible for photoexcited electron-hole pair density of n less than or equal to 1015 cm-3. As the density of photoexcited carriers increased we observed a significant decrease of the average electric field. In particular, for n equals 1018 cm-3, a decrease of electric field of about 50% was found. All of these experimental results were explained by ensemble Monte Carlo simulations and very good agreement has been obtained.
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Ravindra P. Joshi, Ravindra P. Joshi, Kong-Thon F. Tsen, Kong-Thon F. Tsen, David K. Ferry, David K. Ferry, Arnel A. Salvador, Arnel A. Salvador, Andrei Botchkarev, Andrei Botchkarev, Hadis Morkoc, Hadis Morkoc, } "Effects of carrier screening on the average electric field in a GaAs-based p-i-n nanostructure under subpicosecond laser excitation", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306166; https://doi.org/10.1117/12.306166
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