Picosecond dynamics of low-density excitons in GaAs quantum wells

Kai Shum; Robert R. Alfano; Hadis Morkoc

doi:10.1117/12.306148

23 April 1998 Picosecond dynamics of low-density excitons in GaAs quantum wells

Kai Shum, Robert R. Alfano, Hadis Morkoc

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306148
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Time-resolved photoluminescence (PL) measurements were performed on a multiple GaAs/AlGaAs quantum well structure. The rise and decay profiles of PL centered at the free exciton line and the impurity related excitonic-complex line were investigated as a function of temperature at a low excitation density (approximately 10⁹ cm^-2). This study provides new information on how excitons are captured by impurities and on the kinetics of excitonic-complex formation and annihilation. The exciton capture time by impurities is about 250 ps and independent of temperature (less than 80 K) when the exciton density is comparable to the residual impurity density.

Citation Download Citation

Kai Shum, Robert R. Alfano, and Hadis Morkoc "Picosecond dynamics of low-density excitons in GaAs quantum wells", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306148

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