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23 April 1998 Self-heating as a tool for measuring sub-0.1-μm silicon-on-insulator device parameters
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Abstract
SOI MOSFET device structures with SiO2/AlN composite back insulator with wide range thermal conductivity values were investigated. The proposed structures resulted in different amount of self-heating depending on the fraction of SiO2 in the back insulator. For a 0.8 micron FD-SOI MOSFET devices, increases in temperature from 23 C to 173 C for 1 milliwatt of power dissipation were obtained through numerical two dimensional device simulation. Additionally, simulation results show strong variation in mobility and generation current in devices with different back gate oxide composition. Similar structures could be used to determine the temperature dependence of transport parameters such as velocity overshoot, impact ionization rate, and other device parameters.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mohamed A. Osman and Ashraf A. Osman "Self-heating as a tool for measuring sub-0.1-μm silicon-on-insulator device parameters", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306164
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