23 April 1998 Ultrafast hole relaxation in III-V semiconductors
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Abstract
Ultrafast relaxation of photoexcited nonequilibrium holes is selectively investigated in bulk GaAs and InP using a high- sensitivity two-color absorption saturation technique. Measurements of the hole characteristic thermalization time as a function of the lattice temperature and of the carrier density and initial average energy show that nonequilibrium hole relaxation is dominated by hole-optical phonon interactions in the range 100 - 300 K. Comparison of the experimental results with a numerical model of carrier dynamics permits the determination of the optical deformation potential in both of these compounds.
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Natalia Del Fatti, Natalia Del Fatti, Pierre Langot, Pierre Langot, Raffaele Tommasi, Raffaele Tommasi, Fabrice Vallee, Fabrice Vallee, } "Ultrafast hole relaxation in III-V semiconductors", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); doi: 10.1117/12.306143; https://doi.org/10.1117/12.306143
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