12 January 1998 Amorphous silicon waveguides and interferometers for low-cost silicon optoelectronics
Author Affiliations +
Abstract
The present work reports on our recent achievements in the exploitation of a simple technology for the fabrication of hydrogenated amorphous silicon (a-Si:H) based low-loss rib waveguides. In particular, waveguides with various widths have been fabricated out of an a-SiC:H/a-Si:H stack deposited by plasma enhanced chemical vapor deposition at the relatively low temperature of 220 degrees C. The ribs were defined by an anisotropic, CH4-based, reactive ion etching process. The devices have been subsequently characterized by cut-back technique. Even though a dependence of attenuation parameter on the waveguide width was observed, propagation losses as low as 0.7 dB/cm could be measured at λ=1.3 μm, in good agreement with he theoretical estimations based on the intrinsic absorption of the material. Starting from the same structure, a Fabry- Perot thermo optical modulator has been also fabricated and tested at the communication wavelength of 1.3 μm.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Giuseppe Cocorullo, Giuseppe Cocorullo, Francesco G. Della Corte, Francesco G. Della Corte, Rosario De Rosa, Rosario De Rosa, Ivo Rendina, Ivo Rendina, Alfredo Rubino, Alfredo Rubino, Ezio Terzini, Ezio Terzini, } "Amorphous silicon waveguides and interferometers for low-cost silicon optoelectronics", Proc. SPIE 3278, Integrated Optic Devices II, (12 January 1998); doi: 10.1117/12.298212; https://doi.org/10.1117/12.298212
PROCEEDINGS
7 PAGES


SHARE
RELATED CONTENT

Ge quantum-well waveguide modulator at 1.3 um
Proceedings of SPIE (May 01 2014)
Silicon modulator for integrated optics
Proceedings of SPIE (February 01 1991)

Back to Top