12 January 1998 GaAs/AlyGa1-yAs waveguide leakage loss reduction by inserting thin AlAs/AlxGa1-xAs layers into the bottom cladding
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Abstract
In this paper, we present the simulation, fabrication and measurement results of GaAs/AlyGa1-yAs waveguides having a cladding layer nearly 50 percent thinner than the conventional cladding layer thickness, while still achieving an equivalent optical performance. These waveguides are realized by inserting thin layers of AlxGa1-xAs in the AlyGa1-yAs bottom cladding layers. The waveguide layers are grown by standard organo-metallic vapor phase epitaxy with the ridge waveguides defined by reactive ion etching. The composition, thickness and the position f the inserted AlxGa1-xAs layers were optimized so as to maintain the original waveguide performance. The channel waveguide propagation losses are about 1 dB/cm, measured by the Fabry- Perot cavity and the cutback methods. These results were found to be consistent with simulations. The insertion of the thin layers of AlxGa1-xAs in the specific optimized device performance.
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Wei Jian Wang, Wei Jian Wang, H. R. Khazaei, H. R. Khazaei, Ezio Berolo, Ezio Berolo, P. Maigne, P. Maigne, David Coulas, David Coulas, Julian P. Noad, Julian P. Noad, P. Borkowski, P. Borkowski, } "GaAs/AlyGa1-yAs waveguide leakage loss reduction by inserting thin AlAs/AlxGa1-xAs layers into the bottom cladding", Proc. SPIE 3278, Integrated Optic Devices II, (12 January 1998); doi: 10.1117/12.298198; https://doi.org/10.1117/12.298198
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