MBE growth kinetics and thermal stability of Si1-x-yGexCy/Si heterostructures

Michael W. Dashiell; Leonid V. Kulik; Dmitry A. Hits; James Kolodzey

doi:10.1117/12.298210

12 January 1998 MBE growth kinetics and thermal stability of Si_1-x-yGe_xC_y/Si heterostructures

Michael W. Dashiell, Leonid V. Kulik, Dmitry A. Hits, James Kolodzey

Proceedings Volume 3278, Integrated Optic Devices II; (1998) https://doi.org/10.1117/12.298210
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Bandgap tailoring and lattice-matching in SiGeC/Si heterostructures has potential for improving the performance and capabilities of Si based optoelectronics. Although remarkable progress in the molecular beam epitaxy (MBE) of SiGeC/Si heterostructures has been achieved, important questions concerning growth kinetics and thermal stability are still not fully understood. One major obstacle during MBE growth of these heterostructures may be the high surface diffusivity of carbon, which leads to small fractions of substitutional carbon at temperatures necessary for device quality epitaxial growth. We report on the surface kinetic properties of Si_0.992C_0.008/Si and thermal stability of strained Si_0.992C_0.008/Si and strain compensated Si_0.892Ge_0.10C_0.008/Si alloys were shown to be more stable then the binary Si_0.992C_0.008/Si heterostructure alloys.

Citation Download Citation

Michael W. Dashiell, Leonid V. Kulik, Dmitry A. Hits, and James Kolodzey "MBE growth kinetics and thermal stability of Si_1-x-yGe_xC_y/Si heterostructures", Proc. SPIE 3278, Integrated Optic Devices II, (12 January 1998); https://doi.org/10.1117/12.298210

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