7 April 1998 Are cubic nitrides viable materials for optoelectronic devices?
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Abstract
Motivated by the potential advantages that device-quality zinc blende nitrides would offer over their wurtzite counterparts for optoelectronic applications, the optical properties of state-of-the-art cubic GaN grown by molecular beam epitaxy on GaAs(001) are investigated in detail. In view of the high densities of structural defects being caused by the large lattice mismatch to the substrate, special attention is paid to the influence of nonradiative recombination processes on the room temperature band-edge luminescence. A detailed analysis of the temperature and excitation density dependence of the band-edge recombination allows to determine transition and activation energies.In conjunction with model calculations, the internal quantum efficiency and the non-radiative lifetimes are estimated. The decay times as well as the observed phenomenon of defect saturation are verified by time-resolved photoluminescence studies. Upon pulsed optical pumping, optical gain exceeding 100 cm-1 at an excitation energy density of 20 (mu) Jcm-2 is obtained at room temperature.
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Jochen R. Muellhaeuser, R. Klann, H. Yang, Oliver Brandt, Klaus H. Ploog, "Are cubic nitrides viable materials for optoelectronic devices?", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304428; https://doi.org/10.1117/12.304428
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