Development of InAsSb-based light-emitting diodes for chemical sensing systems

Andrew A. Allerman; Steven R. Kurtz; Robert M. Biefeld; K. C. Baucom; Jeff H. Burkhart

doi:10.1117/12.304418

7 April 1998 Development of InAsSb-based light-emitting diodes for chemical sensing systems

Andrew A. Allerman, Steven R. Kurtz, Robert M. Biefeld, K. C. Baucom, Jeff H. Burkhart

Proceedings Volume 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II; (1998) https://doi.org/10.1117/12.304418
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Mid-IR LEDs are being developed for use in chemical sensor systems. As-rich, InAsSb heterostructures are particularly suited for optical emitters in the mid-IR region. We are investigating both InAsSb-InAs multiple quantum well (MQW) and InAsSb-InAsP strained layer superlattice (SLS) structures for use as the active region for light emitting diodes. The addition of phosphorus to the InAs barriers increase the light and heavy hole splitting and hence reduces non-radiative Auger recombination and provides for better electron and hole confinement int eh InAsSb quantum well. Low temperature photoluminescence (PL) emission from MQW structures is observed between 3.2 to 6.0 micrometers for InAsSb wells between 70 to 100 angstrom and antimony more fractions between 0.04 to 0.18. Room temperature PL has been observed to 6.4 micrometers in MQW structures. The additional confinement by InAsP barriers results in low temperature PL being observed over a narrower range for the similar well thicknesses with antimony mole fractions between 0.10 to 0.24. Room temperature photoluminescence was observed to 5.8 micrometers in SLS structures. The addition of a p-AlAsSb layer between the n-type active region and a p-GaAsSb contact layer improves electron confinement of the active region and increases output power by a factor of 4. Simple LED emitters have been fabricated which exhibit an average power at room temperature of > 100 (mu) W at 4.0 micrometers for SLS active regions. These LEDs have been sued to detect CO₂ concentrations down to 24 ppm in a first generation, non- cryogenic sensor system. We will report on the development of novel LED device designs that are expected to lead to further improvements in output power.

Citation Download Citation

Andrew A. Allerman, Steven R. Kurtz, Robert M. Biefeld, K. C. Baucom, and Jeff H. Burkhart "Development of InAsSb-based light-emitting diodes for chemical sensing systems", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); https://doi.org/10.1117/12.304418

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