7 April 1998 InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates
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Abstract
InGaN double heterostructure light emitting diodes (DH-LEDs) were fabricated on hydride vapor phase epitaxy (HVPE) GaN- on-sapphire substrates. These substrates consisted of a thick HVPE GaN layer grown directly on sapphire and eliminated the need for the growth of a low-temperature buffer layer for GaN epitaxy on sapphire. Homojunction and DH-LEDs have been fabricated with various composition InGaN active regions resulting in strong electroluminescence in the blue, green, and yellow portion of the visible spectra. These devices had turn-on voltages as low as 3.6 volts.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gary M. Smith, Gary M. Smith, Karim S. Boutros, Karim S. Boutros, J. W. Szewczuk, J. W. Szewczuk, J. S. Flynn, J. S. Flynn, V. M. Phanse, V. M. Phanse, Robert P. Vaudo, Robert P. Vaudo, Joan Marie Redwing, Joan Marie Redwing, } "InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304424; https://doi.org/10.1117/12.304424
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