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7 April 1998 LEDs on diamond
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Abstract
Fabrication of various types of diamond LEDs, their characteristics and the operation mechanisms are reported. All the devices are based on the double injection electroluminescence: charge carriers are injected into intrinsic (i) diamond from adjacent semiconducting p- and n- type areas. The i-area is activated with appropriate optical centers. In the first step a survey of the appropriate optical centers and their spectra is given. The devices are fabricated in the form of either planar or vertical p-i-n or p-i-p structures. It is shown that the electrical and optical properties of the devices are controlled by the type, concentration, and spatial distribution of the deep traps in the i-region. The selection of diamond substrates suitable for the fabrication of LEDs is an essential point and it can be performed with a microwave photoconductivity technique. Several fields of possible application of diamond LEDs are shown: high temperature LEDs, optical sensors of magnetic field, color switches, color indicators of temperature, the high temperature applications being the most promising application area. Perspectives of creation of diamond based laser diodes is shortly discussed.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wolfgang R. Fahrner, Alexander M. Zaitsev, Alexander A. Melnikov, Andrej V. Denisenko, Reinhart Job, and Shuit-Tong Lee "LEDs on diamond", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); https://doi.org/10.1117/12.304417
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