7 April 1998 Life tests and failure mechanisms of GaN/AlGaN/InGaN light-emitting diodes
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Abstract
Our studies of device lifetime and the main degradation mechanisms in Nichia blue LEDs date back to Spring 1994. Following the initial studies ofrapid failures under high current electrical pulses, where metal migration was identified as the cause of degradation, we have placed a number ofNichia NLPB-500 LEDs on a series oflife tests. The first test ran for 1000 hours under normal operating conditions (20 mA at 23 °C). As no noticeable degradation was observed, the second room temperature test was performed with the same devices but with a range of currents between 20 and 70 mA. After 1600 hours, some degradation in output intensity was observed in devices driven at 60 and 70 mA, but it was still less than 20%. The subsequent tests included stepping up the temperature by 10 °C in 500 h intervals up to a fmal temperature of 95 °C using the same currents applied in the second test. This work reviews the failure analysis that was performed on the degraded devices and the degradation mechanisms that were identified.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Daniel L. Barton, Marek Osinski, Piotr Perlin, Christopher J. Helms, Niel H. Berg, "Life tests and failure mechanisms of GaN/AlGaN/InGaN light-emitting diodes", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304426; https://doi.org/10.1117/12.304426
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KEYWORDS
Light emitting diodes

Temperature metrology

Failure analysis

Absorption

Diodes

Blue light emitting diodes

Resistors

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