7 April 1998 Plasma-assisted molecular beam epitaxial growth and characterization of zincblende (In,Al,Ga)N heterostructures on GaAs(001)
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Abstract
We report on successful growth of zincblende ((beta) ) (In,Al,Ga)N heterostructures on GaAs(001) by means of rf plasma assisted molecular beam epitaxy. The composition of the samples under investigation is analyzed by secondary ion mass spectroscopy and x-ray diffraction. Cross-sectional transmission electron microscopy is used for studying the microstructure and selected area diffraction for verifying the phase purity of the epilayers. The surface morphology is investigated by atomic force microscopy. Temperature dependent transmission, reflectance, and photoluminescence investigations allow the determination of the band gap energy of (beta) -InxGa1-xN. It is shown that by using (beta) -InxGa1-xN blue and green band-edge related emission is obtained with respectively, x equals 0.17 and x equals 0.4 in contrast to wurtzite InxGa1-xN where In contents of about x equals 0.25 and x equals 0.55 are required for achieving the respective colors.
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Jochen R. Muellhaeuser, B. Jenichen, Achim Trampert, Matthias Wassermeier, Oliver Brandt, Klaus H. Ploog, "Plasma-assisted molecular beam epitaxial growth and characterization of zincblende (In,Al,Ga)N heterostructures on GaAs(001)", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304429; https://doi.org/10.1117/12.304429
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