7 April 1998 Recent advances in In(As,Sb) SLS and QW LEDs for the 3- to 10-um region
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InAs/In(As,Sb) heterostructure LEDs are studied in forward (FB) and reverse (RB) bias where the phenomenon of 'negative luminescence' is seen for the first time in this materials system. Pseudomorphic 300K SQW LEDs, lattice matched to InAs and emitting at λ-5 micrometers and λ-8 micrometers , have internal conversion efficiencies of > 1.3 percent and > 0.83 percent respectively and maximum outputs in excess of 50 μW, in spite of an extremely low overall epilayer Sb content. Strain-relaxed InAs/In(As,Sb) SLS LEDs with AlSb barriers for electron confinement give 300K outputs in excess of 0.1mW at λ-4.2μm, approximately 3.5 times greater than control devices without the AlSb barrier. In RB the same SLS diodes exhibited efficient negative luminescence with output powers which increase with increasing device temperature to within 0.8 of the FB figures at 320 K.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher C. Phillips, Christopher C. Phillips, Harvey R. Hardaway, Harvey R. Hardaway, Joerg Heber, Joerg Heber, Peter Moeck, Peter Moeck, Mark J. Pullin, Mark J. Pullin, Patrick J.P. Tang, Patrick J.P. Tang, Peter Yuen, Peter Yuen, } "Recent advances in In(As,Sb) SLS and QW LEDs for the 3- to 10-um region", Proc. SPIE 3279, Light-Emitting Diodes: Research, Manufacturing, and Applications II, (7 April 1998); doi: 10.1117/12.304425; https://doi.org/10.1117/12.304425

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